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Wide Bandwidth, High Optical Power, Low Distortion
InGaAs PIN Photodiodes


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Whether you are designing 10, 20, 40 or 80 Gbits/s digital links with RZ or NRZ formats, or designing RF-over-fiber millimeter-wave analog links, the broad product line of Discovery Semiconductors O/E converters has a match for your needs. These InGaAs PIN photodiodes are used worldwide for applications at 850, 1310, 1550, and 1610 nm. They feature the ability to handle high average optical input powers with excellent linearity, low distortion and low PDL (Polarization Dependence Loss).

For busy test stations or student labs, where users of different experience levels might be handling high value opto-electronics that are easily damaged by mishandling, order your photodiode to be mounted in the Lab Buddy.

PIN Photodiode Frequency Response Curve

Wide Range of Digital and Analog Applications:
  • SONET OC-48 OC-192 OC-768
  • SDH STM-16 STM-64 STM-256
  • Ultra-fast phenomenon research
  • 10, 20, 40, and 80 Gb/sec links
  • Next generation Internet development
  • Digital receivers
  • Broadband analog links
  • Soliton research
  • Fiber driven phased array radars
  • Satellite, terrestrial, wireless & submarine communication links

The Microwave Design Advantage:

Achieving ripple-free response from DC to beyond 70 GHz requires special attention to device design. For all your bandwidth needs, Discovery's photodiode design delivers:
  • Ripple factor less than ±1 dB from the mean
  • Linear response from weak to high optical input signal levels (over 18 mA peak for 10 Gb/sec)
  • Constant bandwidth from low to high light levels (no diffusion tails)
  • Low Polarization Dependence Loss (PDL)
  • Wide spectral response from 800 to 1650 nm
  • Hermetic packaging for long-life
  • Low-voltage bias achieves full bandwidth, longer life, operation from 5 volt supplies
  • Simple bias connections without bias tee
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, New Jersey, 08628, USA

Tel:  609-434-1311
Fax: 609-434-1317

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