Discovery Semiconductors Expands 40G Receiver Product Line (February 2008)

Discovery Semiconductors extends 10Gb/s reach up to 300km using DPSK, coherent detection, and electronic dispersion compensation (January 2008)

University of Kiel and Discovery Semiconductors demonstrate the first error free 40 Gb/s transmission over 50 m of Plastic Optical Fiber (October 2007)

Discovery Semiconductors receives PhAST/Laser Focus World Innovation Award Honorable Mention (May 2007)

University of Kiel chooses Discovery Semiconductors’ Balanced Photoreceivers for 16-ary Modulation Format Research (April 2007)

Discovery Semiconductors Provides High Optical Power Handling Photodiodes for Low Phase Noise Opto-Electronic Oscillators (January 2007)

German Researchers use Discovery Semiconductors’ 20 Gb/s Multimode Optical Receivers to Characterize 980 nm VCSELs (October 2006)

RIN Noise Measurement and Cancellation using Discovery’s Balanced Photodetectors (July 2006)

Scientists use Discovery’s 40 GHz Photodiodes to Characterize 1.3 µm, Directly Modulated Semiconductor Lasers (April 2006)

Discovery Semiconductors Delivers Wide Bandwidth Optical Receivers for Allen Telescope Array (November 2005)

Discovery Semiconductors Delivers High Performance, High Reliability, Custom InGaAs Photodiodes for Navy Applications (September 2005)

Discovery Semiconductors Introduces Optical Coherent Receiver Systems (May 2005)

Balanced Photodiodes with Integrated Optical Delay Line (January 2005)

Discovery Semiconductors Chosen Photodiode Supplier for Scientific Space Project (July 2004)

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For Immediate Release

Key Telecommunications Patent Granted in Canada to United States Manufacturer

July 28, 2001, Ewing, NJ

Discovery Semiconductors, worldwide leader in the manufacture and distribution of 10 & 40 Gigabit fiber optic receivers, announced today that it has received approval for a key patent by the Canadian Intellectual Property Office entitled 'Method and Apparatus for Monolithic Optoelectronic Circuit Using Selective Epitaxy'. The patent, number 2,225,930, was applied for on 6/26/1996 and granted on 3/27/2001.

In this invention, a monolithic optoelectronic integrated circuit (OEIC) is formed using an InGaAs photodiode and a silicon CMOS readout circuitry permitting the growing of high-speed infrared detectors directly on integrated circuits such as amplifiers. This close integration is vitally important to obtaining superior performance in 10 and 40 Gigabit/sec modules as it minimizes path length and parasitic impedances.

According to Discovery CEO and company founder, Abhay Joshi, "Discovery Semiconductors plans to utilize this monolithic technology for advancing its line of state-of-the-art Optical Receivers. The invention allows the use of mature silicon CMOS processing technology to fabricate the OEICs and thereby in the future achieve significant cost saving as compared to GaAs and even SiGe processing. As silicon CMOS tops 10 Gb bandwidth in year 2001, it will automatically replace not only GaAs but even SiGe as the material of choice. Also, the silicon CMOS speed of 10 Gb in 2001 will keep on increasing for the next decade, thereby increasing the value of the patent."

Joshi went on to say, "Since Canada is home to several telecommunication and fiber optic companies and a U.S. patent does not provide Intellectual Property (IP) protection in Canada, we decided to file for the Canadian patent. In doing so, the company will protect its IP both in the USA and Canada. The U.S. patent covering this technique was already granted back in 1997."

The awarded patent will be valid for several years, assuring Discovery's technological edge in the marketplace for 2 decades.

About Discovery Semiconductors, Inc.

Discovery is a leading designer, manufacturer and marketer of ultra-wide bandwidth fiber-optic photodiodes and optical receivers for optical networking, communications and aerospace markets. A privately held firm, it was founded in 1993 for developing opto-electronic detection technology for sensing and communications applications. Based in Ewing, NJ (USA), the company has also achieved certification as ISO9001:2000 compliant.

The winner of a number of research contracts from NASA, the US Air Force and the US Army, the company has developed unique technology for sensor arrays and ultra-wide bandwidth photodiode detectors. The company has several patents granted or pending on its technology. It has leveraged the resulting expertise in RF microwave detection and packaging to make its market leading commercial products. Since 1998, it has expanded its distribution globally, serving over 400 organizations in the telecommunications, data communications and aerospace industries. These achievements resulted in 411% growth from 1995 to 1999, earning a place on the Deloitte and Touche list of New Jersey's Fast 50 companies in 2000. The company received the same honor again in 2001 with a growth of 400% from 1996 to 2000.

For additional information, including complete product specifications, operational capabilities and pricing, or to discuss your application in detail, please call Discovery at: (609) 434-1311 or fax: (609) 434-1317.

Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, New Jersey, 08628, USA

Tel:  609-434-1311
Fax: 609-434-1317

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