High Performance, High Reliability, Custom Dual InGaAs Photodiodes for 2 to 18 GHz Electronic Warfare (EW) Applications (2006)

A. M. Joshi, D. R. Mohr, D. A. Becker, A. Rumyantsev, and S. Lempke
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, New Jersey, 08628, USA

ABSTRACT

We have manufactured custom, dual InGaAs photodiodes using our proprietary Dual-Depletion Region (DDR) technology. The devices demonstrate high reliability and superior RF performance, thus making them ideal for deployment in the field by services like the US Navy...

* Paper presented at GOMACTech Conference, San Diego, California, USA, 2006, paper 25.3 , pp 339-342.