Patent Number: 5,621,227
Date of Patent: April 15, 1997

Method and Apparatus for Monolithic Optoelectronic Integrated Circuit Using Selective Epitaxy

Inventor: Abhay M. Joshi
Assignee: Discovery Semiconductors, Inc.

ABSTRACT

A monolithic Optoelectronic Integrated Circuit including a photodiode and a CMOS readout circuit is described in which the diode is formed by compositionally graded layers of In_xGa_1-xAs selectively epitaxially grown between a substrate of Si and an absorption layer of In_xGa_1-xAs, the areas of said layers being less than 500 µm² and wherein a readout circuit on said substrate is coupled to said diode.