- First Experimental Transmission over 50 m GI-POF at 40 Gb/s for Variable Launching Offsets (2007)
We show by BER measurements the first 40 Gb/s transmission over 50m GI-POF. The robustness towards launching offsets... ( click for more)
- Coherent Optical Receiver with Widely Tunable Local Oscillator Laser (2007)
Recently, there has been a renewed interest in coherent optical detection. The reasons for this are... ( click for more)
- Multimode Fibered Photodetectors for High-Power High-Speed Applications Beyond 10 Gb/s (2007)
We report the development of top illuminated InGaAs photodetectors pigtailed to 50 µm core multimode (MM) fibers... ( click for more)
- Miniature, Light Weight, Coherent Optical Receiver System for Space Platforms (2007)
We have manufactured a miniaturized, light weight, high data rate, optical coherent receiver system... ( click for more)
- Coherent Receivers for Phase-Shift Keyed Transmission (2007)
We review coherent receiver implementations and their performance for phase-shift keyed transmission... ( click for more)
- Measured Noise Performance for Heterodyne Detection of 10-Gb/s OOK and DPSK (2007)
Heterodyne detection of 10-Gb/s nonreturn-to-zero (NRZ) ON–OFF keying and NRZ differential phase-shift keying is demonstrated... ( click for more)
- Unpreamplified 10 Gb/s Heterodyne Detection of OOK and DPSK with Record Receiver Sensitivity (2006)
We report record sensitivities for heterodyne detection of 10 Gb/s OOK and DPSK at -31 dBm and -33 dBm, respectively. The results are achieved without using an optical amplifier... ( click for more)
- Unpreamplified Heterodyne Detection of 10 Gb/s NRZ-OOK with High Receiver Sensitivity (2006)
We report -31 dBm receiver sensitivity for heterodyne detection of 10 Gb/s OOK without using an optical pre-amplifier... ( click for more)
- 10 Gb/s Coherent System Deploying Stable, Low Linewidth Phase Locked Loop (2006)
We demonstrate a coherent heterodyne receiver module with -31 dBm sensitivity for unpreamplified 10 Gb/s on/off keying... ( click for more)
- Coherent Optical Receiver System with Balanced Photodetection (2006)
We report the development of a coherent heterodyne balanced fiber optic receiver with a small laboratory footprint... ( click for more)
- Comparison of Simulation and Measurement Results of a High Speed Intersatellite Optical Communication System (2006)
Optical communications systems are vital to allow high speed satellite-to-satellite and satellite-to-ground-based communication links with low power consumption and low weight... ( click for more)
- Rad-hard, Ultra-fast, InGaAs Photodiodes for Space Applications (2006)
We have manufactured rad-hard, InGaAs photodiodes using our proprietary Dual-Depletion Region (DDR) technology with bandwidths exceeding 10 GHz... ( click for more)
- High Performance, High Reliability, Custom Dual InGaAs Photodiodes for 2 to 18 GHz Electronic Warfare (EW) Applications (2006)
We have manufactured custom, dual InGaAs photodiodes using
our proprietary Dual-Depletion Region (DDR) technology... ( click for more)
- Coherent Receivers Enable Next-Generation Transport (2006)
The transport capacity of fiber-optic communications systems over ultralong-haul (UHL) distances has been significantly increased in recent years... ( click for more)
- Optical Coherent Receivers for 2.5 and 5 Gb/s (2005)
We present coherent optical detection with high sensitivity for fiber-optic and free-space applications... ( click for more)
- Optical Coherent Receivers for 2.5 and 10 Gb/s (2005)
We present coherent optical detection of 2.5 Gb/s and 10 Gb/s with high sensitivity for fiber-optic and free-space applications... ( click for more)
- Balanced Photoreceivers for Analog and Digital Fiber Optic Communications (2005)
We have developed 10, 20, 30, and 40 Gb bandwidth balanced photoreceivers which have applications for both analog and digital fiber optic communications... ( click for more)
- Monolithic InGaAs PIN Photodetector-GaAs MHEMPT Amplifier OEIC Fabrication and Implementation for 28 GHz LMDS Applications (2002)
We have fabricated a monolithic Opto-electronic Integrated Circuit (OEIC) comprising of an InGaAs PIN photodetector and a Common Gate Amplifier (CGA) using Metamorphic High Electron Mobility Transistors (MHEMTs) on 4 inch GaAs substrates... ( click for more)
- Patent: Key Telecommunications Patent Granted in Canada to United States Manufacturer (2001)
Method and Apparatus for Monolithic Optoelectronic Integrated Circuit Using Selective Epitaxy'... ( click for more)
- DC to 65 GHz Wide Bandwidth InGaAs Photodiodes and Photoreceivers (2000)
We have developed 65 GHz Wide Bandwidth InGaAs Photodiodes and Photoreceivers for optical fiber driven telecommunication applications. The Photodiode operates at a nominal reverse bias of -3V... ( click for more)
- 100 GHz Dual Depletion InGaAs/InP Photodiode (2000)
A bandwidth of 100 GHz and group delays exhibiting variations of ± 2 psec have been modeled using a front-illuminated InGaAs/InP dual-depletion PIN photodiode... ( click for more)
- Patent: United States Patent issued (2000)
Lightweight Miniaturized Integrated Microsatellite Employing Advanced Semiconductor Processing and Packaging Technology '... ( click for more)
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Reliability of Optical Fiber Systems (1999)
Discovery Semiconductors has developed 50 GHz "Dual-depletion InGaAs/InP Photodiodes". The PIN operates at -3V reverse bias and has minimum responsivity of 0.7 A/W at 1.3 and 1.55 um wavelength... ( click for more)
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Multilevel Photonic Modules For Millimeter Wave Phased Array Antennas (1998)
Optical signal distribution for phased array antennas in communication systems is advantageous to designers. By distributing the microwave and millimeter wave signals through optical fiber there is the potential for improved performance and lower weight... ( click for more)
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Ultrafast InGaAs PIN Detector For Eyesafe LIDAR (1998)
Eyesafe LIDAR systems require detectors that operate in the 1.55 micron band with high bandwidth and large area. This paper describes the three design methods used in developing such detectors... ( click for more)
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The Next Generation of Monolithic Infrared Detector Arrays (1998)
Recently NASA announced an initiative " X-2000" whose ultimate goal is "satellite-on-a-chip." We propose advanced, Monolithic InGaAs-on-silicon Short Wave Infrared (SWIR), and Monolithic InSb-on-silicon Medium Wave Infrared (MWIR) detector arrays for X-2000... ( click for more)
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Design of An Integrated Satellite (INT-SAT) Using Advanced Semiconductor Technology (1998)
Micro-satellites are fast becoming important scientific and commercial realities. However, most satellites that fall in this class are still fairly large (~50 Kg, ~0.5 m). One of the major obstacles in reducing these parameters further is the lack of integration of all the satellites functions... ( click for more)
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Monolithic InGaAs-on-silicon Short Wave Infrared Detector (1997)
We have designed and developed 1, 16, 256, and 512 element linear Monolithic InGaAs-on-silicon infrared Detector Arrays for the 1-3 µm SWIR band. A methodology of monolithically integrating InGaAs photodetectors and high density complex CMOS readout electronics all on a single silicon substrate has been developed... ( click for more)
- Patent: United States Patent issued (1997)
Method and Apparatus for Monolithic Optoelectronic Integrated Circuit Using Selective Epitaxy '... ( click for more)
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Ultrafast, Dual-Depletion Region, InGaAs/InP p-i-n Detector (1996)
The design of a new kind of photodetector, the dual-depletion region p-i-n photodetector, is presented. This vertical detector has a parasitic capacitance and transit time that can be controlled semi-independently... ( click for more)
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Resonant Optical Detection (1995)
Monochromatic optical detection is often desired. One technique to accomplish this is to place the detector within an optical resonator... ( click for more)
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Monolithic InGaAs-on-silicon Detector with a CMOS Switched Capacitor Integrator (1994)
We have successfully grown InGaAs detectors on the silicon substrate using the special technique of selective epitaxy. Small diameter (50 µm) selective area depositions of In 0.5Ga 0.5As on silicon have exhibited a lower dislocation density, and hence, better electrical performance... ( click for more)
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, New Jersey, 08628, USA
Tel: 609-434-1311
Fax: 609-434-1317
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